2
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 32 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 350
μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(3)
(VDD
= 32 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.4 Adc)
VDS(on)
—
0.22
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(4)
(VDS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
—
1.22
—
pF
Output Capacitance
(4)
(VDS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
—
217
—
pF
Input Capacitance
(1)
(VDS
= 32 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
—
1060
—
pF
Functional Tests (3)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 1600 mA, P
out
= 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps
19
20.4
23
dB
Drain Efficiency
ηD
41
44.8
—
%
Intermodulation Distortion
IMD
—
-28.8
-27
dBc
Input Return Loss
IRL
—
-18.4
-9
dB
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push-pull configuration.
Drains are tied together internally as this is a total device value.
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